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APT80GP60J
600V
POWER MOS 7 IGBT
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
(R)
E G C
E
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
* 100 kHz operation @ 400V, 39A * 50 kHz operation @ 400V, 59A * SSOA rated
C G E
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT80GP60J UNIT
600 20 30 151 68 330 330A @ 600V 462 -55 to 150 300
Watts C Amps Volts
@ TC = 25C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 1.0
2
6 2.7
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
I CES I GES
mA nA
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
5
11-2003 050-7426 Rev B
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT80GP60J
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 80A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 80A
4
MIN
TYP
MAX
UNIT
9840 735 40 7.5 280 65 85 330 29 40 116 78 795 1536 1199 29 40 149 84 795 2153 1690 J
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching SOA
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 5 6
R G = 5 TJ = +25C
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 80A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.27 N/A 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7426
Rev B
11-2003
TYPICAL PERFORMANCE CURVES
120
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
APT80GP60J
120 100
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
100
80 60 TC=25C 40 TC=125C 20 0 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 500 TC=-55C
80 TC=-55C
60 40
TC=25C TC=125C
20 0
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (VGE = 10V) 16
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
TJ = -55C
14 12 10 8 6 4 2 0
IC = 80A TJ = 25C
IC, COLLECTOR CURRENT (A)
400
VCE=120V VCE=300V
300
VCE=480V
200 TJ = 25C 100 TJ = 125C 0 0 1 234 56 78 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
0
50
100 150 200 250 GATE CHARGE (nC) FIGURE 4, Gate Charge
300
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3 2.5 IC= 80A 2 1.5 1 0.5 0 IC= 160A
3 IC= 160A 2.5 IC= 80A 2 1.5 IC=40A
IC= 40A
1 0.5
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2 1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
6
0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 200
IC, DC COLLECTOR CURRENT(A)
0 -50
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
-25
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
160
120
80
11-2003
40
050-7426
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
0 -50
-25
Rev B
APT80GP60J
40
td(ON), TURN-ON DELAY TIME (ns)
180 VGE= 15V
td (OFF), TURN-OFF DELAY TIME (ns)
35 30 25 20 15 10 5
160 140 120 100 80 60 40 20 0
VCE = 400V RG = 5 L = 100 H
VGE =15V,TJ=125C
VGE =15V,TJ=25C
0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 60 50 40 30 20 10 0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000
EON2, TURN ON ENERGY LOSS (J)
VCE = 400V RG = 5 L = 100 H VCE = 400V RG = 5 L = 100 H TJ = 25 or 125C,VGE = 15V
VCE = 400V TJ = 25C, TJ =125C RG = 5 L = 100 H
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 140 120 100 80 60 40 20 0
VCE = 400V RG = 5 L = 100 H TJ = 25C, VGE = 10V or 15V TJ = 125C, VGE = 10V or 15V
tr, RISE TIME (ns)
tf, FALL TIME (ns)
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 4000
EOFF, TURN OFF ENERGY LOSS (J)
VCE = 400V RG = 5 L = 100 H
3500 3000 2500 2000 1500 1000 500
3000
TJ = 125C, VGE = 10V or 15V
TJ =125C, VGE=15V
2000
1000
TJ = 25C, VGE=15V
TJ = 25C, VGE = 10V or 15V
0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 6000
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V TJ = 125C
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 4000
VCE = 400V VGE = +15V RG = 5
0
Eon2 120A
SWITCHING ENERGY LOSSES (J)
5000 4000
Eon2 120A
3000 Eoff 120A 2000 Eoff 80A 1000 Eon2 40A Eoff 40A 0 0
Eoff 120A 3000
Eon2 80A
Eon2 80A
11-2003
2000 Eon2 40A 1000
Eoff 80A
Rev B
Eoff40A 10 15 20 25 30 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 5
050-7426
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
20,000 10,000 5,000
IC, COLLECTOR CURRENT (A)
APT80GP60J
300 Cies 2m50
200 150
1,000 500
Coes
100 50 Cres
100
50 0
10 0 10 20 30 40 50
0
100
200
300
400
500
600
700
0.30
ZJC, THERMAL IMPEDANCE (C/W)
0.25
0.9
0.20
0.7
0.15
0.5 Note:
0.10
PDM
0.3
t1 t2 Duty Factor D = t1/t2
0.05
0.1 0.05 SINGLE PULSE 10-5 10-4
0
Peak TJ = PDM x ZJC + TC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
190 100
FMAX, OPERATING FREQUENCY (kHz)
Junction temp (C) 0.0260 0.00119F
50
Power (watts)
0.0584
0.0354F
Fmax = min(f max1 , f max 2 )
10
f max1 =
TJ = 125C TC = 75C D = 50 % VCE = 400V RG = 5
0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
0.185 Case temperature(C)
0.463F
f max 2 = Pdiss =
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
1 10 20 30 40 50 60 70 80 90 100 110 130 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
TJ - TC R JC
050-7426
Rev B
11-2003
APT80GP60J
Gate Voltage
APT60DF60
10%
td(on)
V CC IC V CE
T J = 125 C
90%
Collector Current
tr
A D.U.T.
5% Switching Energy
10%
5% Collector Voltage
Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions
VTEST *DRIVER SAME TYPE AS D.U.T.
90% Gate Voltage
TJ = 125 C
A
td(off)
90%
Collector Voltage
V CE IC 100uH
tf
10% Collector Current
Switching Energy
V CLAMP
B
A DRIVER* D.U.T.
0
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
11.8 (.463) 12.2 (.480) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594)
1.95 (.077) 2.14 (.084)
* Emitter
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
11-2003
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Rev B
* Emitter
Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
050-7426
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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